Researchers from the Center for Integrated Nanostructure Physics within the Institute for Basic Science (IBS) in South Korea have made an intriguing breakthrough in harnessing unwanted electronic noise in semiconductors. Led by Professor Lee Young Hee, the team discovered that by introducing vanadium in tungsten diselenide (V-WSe2) as a magnetic dopant, they could generate magnetic fluctuations and random telegraph noise (RTN) signals in a layered semiconductor.
Unwanted electronic noise, such as RTN, has long been a nuisance in electronic systems, causing fluctuations and errors in signal processing. However, the researchers were able to turn this unwanted noise into an advantage by creating a vertical magnetic tunneling junction device with low contact resistance. This device used a few layers of V-WSe2, a magnetic material, sandwiched between top and bottom graphene electrodes.
Through resistance measurement experiments, the team observed RTNs with a high amplitude of up to 80% between two stable states. They identified a bistable magnetic state through distinct features in the noise power spectrum and discrete Gaussian peaks in the RTN histogram. They also discovered that they could switch the bistable magnetic state and the cut-off frequency of the RTN by simply changing the voltage polarity.
This breakthrough opens up potential applications in magnetic semiconductors and spintronics, offering magnetic switching capability with 1/f2 noises. The ability to control and manipulate magnetic fluctuations in semiconductors could pave the way for advancements in quantum computing and terahertz technology for quantum sensing.
Professor Lee explained, This is a first step to observe the bistable magnetic state from large resistance fluctuations in magnetic semiconductors and offers the magnetic switching capability with 1/f2 noises by means of simple voltage polarity in spintronics.
The research was conducted through interdisciplinary collaboration with researchers from Sookmyung Women’s University and Harvard University.
This exciting discovery showcases the potential of unwanted electronic noise in semiconductors and highlights the importance of exploring unconventional avenues in scientific research. By harnessing and manipulating these fluctuations, researchers can unlock new possibilities in the field of spintronics and magnetic semiconductors.
Frequently Asked Questions (FAQs) Related to the Above News
What is the breakthrough made by the researchers at the Center for Integrated Nanostructure Physics in South Korea?
The researchers have made a breakthrough in harnessing unwanted electronic noise in semiconductors by introducing vanadium in tungsten diselenide, which generates magnetic fluctuations and random telegraph noise (RTN) signals.
Why is unwanted electronic noise a problem in electronic systems?
Unwanted electronic noise, such as random telegraph noise (RTN), can cause fluctuations and errors in signal processing, making it a nuisance in electronic systems.
How did the researchers turn unwanted electronic noise into an advantage?
The researchers created a vertical magnetic tunneling junction device with low contact resistance using a few layers of vanadium-doped tungsten diselenide. This device effectively utilized the unwanted noise to achieve magnetic switching capability.
What did the resistance measurement experiments reveal?
The resistance measurement experiments showed random telegraph noises (RTNs) with a high amplitude of up to 80% between two stable states. The researchers identified a bistable magnetic state and discovered that they could switch it and the cut-off frequency of the RTN by changing the voltage polarity.
What are the potential applications of this breakthrough?
This breakthrough opens up potential applications in magnetic semiconductors and spintronics. It offers magnetic switching capability with 1/f2 noises, which could have implications for advancements in quantum computing and terahertz technology for quantum sensing.
What did Professor Lee Young Hee say about this achievement?
Professor Lee Young Hee explained that this achievement is a first step to observe the bistable magnetic state in magnetic semiconductors and offers the magnetic switching capability with 1/f2 noises in spintronics.
Who collaborated on this research?
The research was conducted through interdisciplinary collaboration with researchers from Sookmyung Women's University and Harvard University.
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