Renesas Electronics Corporation has announced its plans to expand its presence in the power semiconductor market through the acquisition of GaN (gallium nitride) technology. The company has entered into a definitive agreement with Transphorm, Inc., wherein a subsidiary of Renesas will acquire GaN, a key material for next-generation power semiconductors.
The acquisition of GaN technology will enable Renesas to strengthen its capabilities in various fast-growing markets, including electric vehicles (EVs), computing (such as data centers and AI), renewable energy, industrial power conversion, and fast chargers/adapters. GaN is an emerging material known for its ability to offer higher switching frequency, lower power losses, and smaller form factors. By leveraging Transphorm’s expertise in GaN, Renesas aims to enhance its power solution offerings for not only EVs but also applications in computing, energy, industrial, and consumer sectors.
The demand for efficient power systems is surging as they serve as building blocks for carbon neutrality. Wide bandgap materials like silicon carbide and GaN are gaining prominence in the industry as they allow for a broader range of voltage and switching frequency compared to conventional silicon-based devices. To capitalize on this trend, Renesas plans to establish an in-house production line for silicon carbide (SiC), complemented by a 10-year SiC wafer supply agreement.
According to an industry study, the demand for GaN is projected to grow by over 50 percent annually, underlining its significance in the power semiconductor market. Renesas intends to harness Transphorm’s auto-qualified GaN technology to develop new and enhanced power solutions. These solutions will empower customers by offering greater efficiency, smaller and lighter compositions, and reduced overall costs.
With the acquisition of GaN technology and the establishment of an SiC production line, Renesas is strategically positioning itself to meet the increasing demand for wide bandgap materials. The company’s expanded portfolio of wide bandgap semiconductors will enable it to serve diverse industries, supporting the transition towards highly efficient power systems that are crucial for a sustainable future.
In conclusion, Renesas’ acquisition of GaN technology and its focus on expanding its wide bandgap semiconductor portfolio demonstrate the company’s commitment to meeting the evolving needs of the power semiconductor market. Through this strategic move, Renesas aims to enhance its capabilities, broaden its market reach, and drive innovation in various industries that rely on power semiconductors.
