Could RAM replace SSD? Not exactly, but Neo Semiconductor’s innovative technological solution has the potential to do just that and make it even better. The Japanese memory startup has emerged from the shadows with an aim to produce DRAM chips eight times the density of existing ones, with their 3D X-DRAM technology. This venture creates the promise of a 128 Gbit DRAM chip, surpassing Samsung’s target for a 32Gbit DDR5 DRAM chip in 2023.
The Layer Memory X-DRAM technology is composed of 230 layers of material and could even reach 1TB by 2024. Compared to Samsung’s technology that required more than a decade to progress from 4Gb to 16Gb, Neo Semiconductor’s technology performs exponentially better. Conforming to the memory-storage pyramid, large language models like AI and Machine Learning require immense memory access and Neo’s technology might just be the solution to the problem.
In terms of cost and market value, Neo Semiconductor’s new product could bring down the cost of memory, in the same way, 3D NAND did for solid state storage. It benefits from current available technological developments, just like 3D NAND, and is an extremely viable option since most server motherboards cannot accommodate too many memory slots.
As far as end users are concerned, it is highly unlikely that 256GB DRAMs will be available at the consumer market anytime soon but it will revolutionize server storage, thereby benefitting people indirectly.
Andy Hsu is the CEO and co-founder of Neo Semiconductor and has been actively advocating for the company’s newest project. He has been talking to DRAM manufacturers to license the technology, with a projected launch of the prototype next year.
Overall, 3D X-DRAM is set to make a massive impact in the memory-storage pyramid, making it simpler and more affordable than ever before. Its powerful capabilities along with the ease of procurement from trusted sources, makes it a promising contender for all future data processing needs.
